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HN2S03FE

Application` HN2S03FE is composed of 3 independent diodes.` Low forward voltage : VF (3) = 0.50V (typ.)` Low reverse current : IR= 0.5A (max)` Small total capacitance : CT = 3.9pF (typ.)Specifications Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM ...

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SeekIC No. : 004365017 Detail

HN2S03FE: Application` HN2S03FE is composed of 3 independent diodes.` Low forward voltage : VF (3) = 0.50V (typ.)` Low reverse current : IR= 0.5A (max)` Small total capacitance : CT = 3.9pF (typ.)Specificatio...

HN2S03FE Data Sheet

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Part Number:
HN2S03FE
Supply Ability:
5000

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  • 1~5000
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Product Details

Description



Application

` HN2S03FE is composed of 3 independent diodes.
` Low forward voltage : VF (3) = 0.50V (typ.)
` Low reverse current : IR= 0.5A (max)
` Small total capacitance : CT = 3.9pF (typ.)


Specifications

Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
VRM
25
V
Reverse voltage
VR
20
V
Maximum (peak) forward current
IFM
100*
mA
Average forward current
IO
50 *
mA
Surge current (10ms)
IFSM
1 *
A
Power dissipation
P
100 **
mW
Junction temperature
Tj
125
Storage temperature range
Tstg
−55∼125
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
* : This is the absolute maximum rating for a single diode (Q1, Q2 or Q3). If two or three diodes are used, the absolute maximum rating per diode is 75 % that of the single diode.
** :Total rating


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