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HN2S05FU
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General Description

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MFG:TOSHIBA Package Cooled:07+ D/C:SOT363

HN2 Series Datasheet download

Five Points

Part Number: HN2S05FU

MFG: TOSHIBA

Package Cooled: 07+

D/C: SOT363

HN2S05FU Maximum Ratings

Characteristic	Symbol	Rating	Unit
Maximum (peak) reverse voltage	V_RM	15	V
Reverse voltage	V_R	10	V
Maximum (peak) forward current	I_FSM	200 *	mA
Average forward current	I_O	100 *	mA
Surge current (10ms)	I_FSM	1 *	A
Power dissipation	P	100 *	mW
Junction Temperature	T_j	125
Storage Temperature Range	T_stg	−55∼125
Operating temperature range	T_opr	−40∼110

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
* : This is the absolute maximum rating for a single diode (Q1, Q2 or Q3). Where two or three diodes are used, the absolute maximum rating per diode is 75% that for a single iode.
** :Total rating

HN2S05FU Typical Application

The HN2S05FU is composed of three (3) independent diodes.
Excellent forward current and forward voltage characteristics:
V_F = 0.23 V (typ.) @ I_F = 5 mA

HN2S05FU datasheet

HN27512
PDF/DataSheet Download

Datasheet: HN27512
File Size: 309819 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Click here to Download

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