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HN2S05FU

ApplicationThe HN2S05FU is composed of three (3) independent diodes.Excellent forward current and forward voltage characteristics: VF = 0.23 V (typ.) @ IF = 5 mASpecifications Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 15 V Reverse voltage ...

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SeekIC No. : 004365020 Detail

HN2S05FU: ApplicationThe HN2S05FU is composed of three (3) independent diodes.Excellent forward current and forward voltage characteristics: VF = 0.23 V (typ.) @ IF = 5 mASpecifications Characteristic ...

HN2S05FU Data Sheet

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Part Number:
HN2S05FU
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5000

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Upload time: 2025/12/21

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Product Details

Description



Application

The HN2S05FU is composed of three (3) independent diodes.
Excellent forward current and forward voltage characteristics:
   VF = 0.23 V (typ.) @ IF = 5 mA


Specifications

Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
15
V
Reverse voltage
VR
10
V
Maximum (peak) forward current
IFSM
200 *
mA
Average forward current
IO
100 *
mA
Surge current (10ms)
IFSM
1 *
A
Power dissipation
P
100 *
mW
Junction Temperature
Tj
125
Storage Temperature Range
Tstg
−55∼125
Operating temperature range
Topr
−40∼110
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
* : This is the absolute maximum rating for a single diode (Q1, Q2 or Q3). Where two or three diodes are used, the absolute maximum rating per diode is 75% that for a single  iode.
** :Total rating


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