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HN4B101J

Application·Small footprint due to a small and thin package ·High DC current gain : hFE= 200 to 500 (IC = 0.12 A)·Low collector-emitter saturation: PNP VCE(sat)= 0.20 V (max) : NPN VCE (sat) = 0.17 V (max)·High-speed switching : PNP tf= 45 ns (typ.) : NPN tf= 50 ns (typ.) PinoutSpecifications ...

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SeekIC No. : 004365025 Detail

HN4B101J: Application·Small footprint due to a small and thin package ·High DC current gain : hFE= 200 to 500 (IC = 0.12 A)·Low collector-emitter saturation: PNP VCE(sat)= 0.20 V (max) : NPN VCE (sat) = 0.17...

HN4B101J Data Sheet

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Part Number:
HN4B101J
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
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Product Details

Description



Application

·Small footprint due to a small and thin package 
·High DC current gain : hFE = 200 to 500 (IC = 0.12 A) 
·Low collector-emitter saturation: PNP  VCE(sat) = 0.20 V (max)
                                                  : NPN  VCE (sat) = 0.17 V (max) 
·High-speed switching : PNP  tf = 45 ns (typ.)
                                    : NPN  tf = 50 ns (typ.)




Pinout

Connection Diagram


Specifications

Characteristic
Symbol
Rating
Unit
PNP NPN
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
VCBO
VCES
VEBO
 -30
-30
-7
50
30
7
V
V
V
Collector current
DC (Note1)
IC
-1.0
1.2
A
Pulse (Note1)
ICP
-5.0
5.0
Base current
IB
-120
120
A
Collector power
dissipation (t=10s)
Single-device
operation
PC(Note2)
0.85
W
Collector power
dissipation (DC)
Single-device
operation
PC(Note2)

0.55
W
Junction temperature
Storage temperature range
Tj
Tstg
150
-55 to 150


Note 1: Ensure that the channel temperature does not exceed 150!aC during use of the device.
Note 2: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2) 
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) anindividual reliability data (i.e. reliability test report and estimated failure rate, etc).




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