HN58C256A

Features:

` Single 5 V supply: 5 V ±10%
` Access time: 85 ns/100 ns (max)
` Power dissipation
    - Active: 20 mW/MHz, (typ)
    - Standby: 110 W (max)
` On-chip latches: address, data, CE, OE, WE
` Automatic byte write: 10 ms max
` Automatic page write (64 bytes): 10 ms max
` Ready/Busy (only the HN58C257A series)
` Data polling and Toggle bit
` Data protection circuit on power on/off
` Conforms to JEDEC byte-wide standard
` Reliable CMOS with MNOS cell technology
` 105 erase/write cycles (in page mode)
` 10 years data retention ` Software data protection
` Write protection by RES pin (only the HN58C257A series)
` Industrial versions (Temperatur range: 20 to 85°C and 40 to 85°C) are also available.


Pinout




Specifications

Parameter	Symbol	Value	Unit
Power supply voltage rerative to VSS	VCC	0.6 to +7.0	V
Input voltage rerative to VSS	Vin	0.5*1 to +7.0*3	V
Operating temperature range*2	Topr	0 to +70
Storage temperature range	Tstg	55 to +125

Description

The Hitachi HN58C256A and HN58C257A are electrically erasable and programmable ROMs organized as 32768-word ´ 8-bit. They have realized high speed low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster.