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HN58C65

Features: • Single 5 V Supply• On chip latches: address, data, CE, OE, WE• Automatic byte write: 10 ms max• Automatic page write (32 byte): 10 ms max• Fast access time: 250 ns max• Low power dissipation: 20 mW/MHz typ (Active) 2.0 mW typ (Standby)• Data po...

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SeekIC No. : 004365035 Detail

HN58C65: Features: • Single 5 V Supply• On chip latches: address, data, CE, OE, WE• Automatic byte write: 10 ms max• Automatic page write (32 byte): 10 ms max• Fast access time:...

HN58C65 Data Sheet

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Part Number:
HN58C65
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Description



Features:

• Single 5 V Supply
• On chip latches: address, data, CE, OE, WE
• Automatic byte write: 10 ms max
• Automatic page write (32 byte): 10 ms max
• Fast access time: 250 ns max
• Low power dissipation: 20 mW/MHz typ (Active) 2.0 mW typ (Standby)
• Data polling and Ready/Busy
• Data protection circuity on power on/power off
• Conforms to JEDEC byte-wide standard
• Reliable CMOS with MNOS cell technology
• 105 erase/write cycles (in page mode)
• 10 year data retention


Pinout

Connection Diagram


Specifications

Parameter Symbol Value Unit
Supply voltage*1 VCC 0.6 to +7.0 V
Input voltage*1 Vin 0.5*2 to +7.0 V
Operating temperature range*3 Topr 0 to +70 °C
Storage temperature range Tstg 55 to +125 °C
Notes: 1. With respect to VSS
           2. 3.0 V for pulse width 50 ns.
           3. Including electrical characteristics and data retention.


Description

The Hitachi HN58C65 is a electrically erasable and programmable ROM organized as 8192-word × 8-bit. It realizes high speed, low power consumption, and a high level of reliability, employing advanced MNOS memory technology and CMOS process and circuitry technology. It also has a 32-byte page programming function to make its erase and write operations faster.




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