HN58C66

Features: · Single 5 V supply· On chip latches: address, data, CE , OE , WE · Automatic byte write: 10 ms max· Automatic page write (32 bytes): 10 ms max· High speed: Access time 250 ns max· Low power dissipation: 20 mW/MHz typ (active) 2.0 mW typ (standby)· Data polling, RDY/Busy· Data protection...

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HN58C66 Picture
SeekIC No. : 004365036 Detail

HN58C66: Features: · Single 5 V supply· On chip latches: address, data, CE , OE , WE · Automatic byte write: 10 ms max· Automatic page write (32 bytes): 10 ms max· High speed: Access time 250 ns max· Low pow...

floor Price/Ceiling Price

Part Number:
HN58C66
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/4/17

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Product Details

Description



Features:

·  Single 5 V supply
·  On chip latches: address, data, CE , OE , WE
·  Automatic byte write: 10 ms max
·  Automatic page write (32 bytes): 10 ms max
·  High speed: Access time 250 ns max
·  Low power dissipation:
     20 mW/MHz typ (active)
     2.0 mW typ (standby)
·  Data polling, RDY/Busy
·  Data protection circuit on power on/off
·  Conforms to JEDEC byte-wide standard
·  Reliable CMOS with MNOS cell technology
·  105 erase/write cycles (in page mode)
·  10 years data retension
·  Write protection by RES pin



Pinout

  Connection Diagram


Specifications

Parameter
Symbol
Value
Unit
Supply voltage*1
VCC
0.6 to +7.0
V
Input voltage*1
Vin
0.5*2 to +7.0
V
Operating temperature range*3
Topr
0 to +70
°C
Storage temperature range
Tstg
55 to +125
°C
Notes: 1. With respect to VSS
2. Vin min = 3.0 V for pulse width 50 ns
3. Including electrical characteristics and data retention



Description

The Hitachi HN58C66 is a electrically erasable and programmable ROM organized as 8192-word× 8-bit. It realizes high speed, low power consumption, and a high level of reliability, employing advanced MNOS memory technology and CMOS process and circuitry technology. It also has a 32-byte page programming
function to make its erase and write operations faster.




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