HN58S256A

Features: ` Single supply: 2.2 to 3.6 V` Access time: 150 ns (max)/200 ns (max)` Power dissipation: - Active: 10 mW/MHz, (typ) - Standby: 36 mW (max)` On-chip latches: address, data, CE, OE, WE` Automatic byte write: 15 ms (max)` Automatic page write (64 bytes): 15 ms (max)` Data polling and Toggl...

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SeekIC No. : 004365037 Detail

HN58S256A: Features: ` Single supply: 2.2 to 3.6 V` Access time: 150 ns (max)/200 ns (max)` Power dissipation: - Active: 10 mW/MHz, (typ) - Standby: 36 mW (max)` On-chip latches: address, data, CE, OE, WE` Aut...

floor Price/Ceiling Price

Part Number:
HN58S256A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Description



Features:

`  Single supply: 2.2 to 3.6 V
`  Access time: 150 ns (max)/200 ns (max)
`  Power dissipation:
    -  Active: 10 mW/MHz, (typ)
    -  Standby: 36 mW (max)
`  On-chip latches: address, data, CE, OE, WE
`  Automatic byte write: 15 ms (max)
`  Automatic page write (64 bytes): 15 ms (max)
`  Data polling and Toggle bit
`  Data protection circuit on power on/off
`  Conforms to JEDEC byte-wide standard
`  Reliable CMOS with MNOS cell technology
`  105 erase/write cycles (in page mode)
`  10 years data retention
`  Software data protection
`  Industrial versions (Temperatur range:40 to 85°C) are also available.



Pinout

  Connection Diagram


Specifications

Parameter
Symbol
Value
Unit
Power supply voltage relative to VSS
VCC
0.6 to +4.6
V
Input voltage relative to VSS
Vin
0.5*1to +4.6*3
V
Operating temperature range*2
Topr
0 to +70
Storage temperature range
Tstg
55 to +125



Description

The Hitachi HN58S256A is a electrically erasable and programmable EEPROM's organized as 32768- word x8-bit employing advanced MNOS memory technology and CMOS process and circuitry technology. It also has a 64-byte page programming function to make the write operations faster.




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