Features: ` Single 3 V supply: 2.2 to 3.6 V` Access time: 150 ns/200 ns (max)` Power dissipation - Active: 10 mW/MHz (typ) - Standby: 36 mW (max)` On-chip latches: address, data, CE , OE , WE ` Automatic byte write: 15 ms (max)` Automatic page write (64 bytes): 15 ms (max)` Data polling and Toggle...
HN58S256AI: Features: ` Single 3 V supply: 2.2 to 3.6 V` Access time: 150 ns/200 ns (max)` Power dissipation - Active: 10 mW/MHz (typ) - Standby: 36 mW (max)` On-chip latches: address, data, CE , OE , WE ` Auto...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Parameter |
Symbol |
Value |
Unit |
Supply voltage relative to VSS |
VCC |
0.6 to + 4.6 |
V |
Input voltage relative to VSS |
Vin |
0.5*1 to +4.6*3 |
V |
Operating temperature range*2 |
Topr |
40 to +85 |
°C |
Storage temperature range |
Tstg |
55 to +125 |
°C |
The Hitachi HN58S256AI is electrically erasable and programmable ROM organized as 32768-word× 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology. It also has a 64-byte page programming function to make the write operations faster.