Features: ` Single 3 V supply: 2.7 to 5.5 V ` Access time: 120 ns max ` Power dissipation:- Active: 20 mW/MHz, (typ) - Standby: 110 W (max) ` On-chip latches: address, data, CE, OE, WE ` Automatic byte write: 10 ms max ` Automatic page write (64 bytes): 10 ms max ` Ready/Busy (only the HN58V257A s...
HN58V257A: Features: ` Single 3 V supply: 2.7 to 5.5 V ` Access time: 120 ns max ` Power dissipation:- Active: 20 mW/MHz, (typ) - Standby: 110 W (max) ` On-chip latches: address, data, CE, OE, WE ` Automatic b...
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Parameter |
Symbol |
Value |
Unit |
Supply voltage relative to VSS |
VCC |
0.6 to +7.0 |
V |
Input voltage relative to VSS |
Vin |
0.5*1 to +7.0*3 |
V |
Operating temperature range*2 |
Topr |
0 to +70 |
|
Storage temperature range |
Tstg |
55 to +125 |
The Hitachi HN58V256A and HN58V257A are electrically erasable and programmable ROMs organized as 32768-word x 8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster.