HN58V66A

`  Single supply: 2.7 to 5.5 V
`  Access time:
    -  100 ns (max) at 2.7 V VCC < 4.5 V
    -  70 ns (max) at 4.5 V VCC 5.5 V
`  Power dissipation:
    - Active: 20 mW/MHz (typ)
    - Standby: 110 mW (max)
`  On-chip latches: address, data, CE, OE, WE
`  Automatic byte write: 10 ms (max)
`  Automatic page write (64 bytes): 10 ms (max)
`  Ready/Busy
`  Data polling and Toggle bit
`  Data protection circuit on power on/off
`  Conforms to JEDEC byte-wide standard
`  Reliable CMOS with MNOS cell technology
`  10⁵ erase/write cycles (in page mode)
`  10 years data retention
`  Software data protection
`  Write protection by RES pin (only the HN58V66A series)
`  Industrial versions (Temperatur range: 20 to 85°C and 40 to 85°C) are also available.

The Hitachi HN58V65A series and HN58V66A series are a electrically erasable and programmable EEPROM's organized as 8192-word x 8-bit. They have realized high speed, low power consumption and high relisbility by employing advanced MNOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster.