Features: ` Low voltage operation Mask ROM Single 3.3 V supply` High speed Access time: 150 ns (max)` Low power Active: 216 mW (max) Standby: 108 W (max)` Byte-wide or word-wide data organization (Switched by BHE terminal)` Three-state data output for or-tying` Directly LVTTL compatible All inputs...
HN62W4416: Features: ` Low voltage operation Mask ROM Single 3.3 V supply` High speed Access time: 150 ns (max)` Low power Active: 216 mW (max) Standby: 108 W (max)` Byte-wide or word-wide data organization (S...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Parameter |
Symbol |
Value |
Unit |
Supply voltage*1 |
VDD |
0.3 to +5.5 |
V |
All input and output voltage*1 |
Vin, Vout |
0.3 to VDD + 0.3 |
V |
Operating temperatue range |
Topr |
0 to +70 |
°C |
Storage temperature range |
Tstg |
55 to +125 |
°C |
Temperature under bias |
Tbias |
20 to + 85 |
°C |
The HN62W4416 is a 16-Mbit CMOS mask-Programmable ROM organized either as 1048576 words by 16 bits or 2097152 words by 8 bits. Realizing low power consumption, this memory is allowed for battery operation. And a high speed access of 150 ns (max) is the most suitable to the system using a high speed
micro-computer by 16 bits.