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HN62W4416N

Features: ` Low voltage operation Mask ROM Single 3.3 V supply` High speed Normal access time: 150 ns (max) Page access time: 50 ns (max)` Low power Active: 252 mW (max) Standby: 108 W (max)` Byte-wide or word-wide data organization (Switched by BHE terminal)` 4 word page access on word-wide mode`...

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SeekIC No. : 004365114 Detail

HN62W4416N: Features: ` Low voltage operation Mask ROM Single 3.3 V supply` High speed Normal access time: 150 ns (max) Page access time: 50 ns (max)` Low power Active: 252 mW (max) Standby: 108 W (max)` Byte-w...

HN62W4416N Data Sheet

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Part Number:
HN62W4416N
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Description



Features:

`  Low voltage operation Mask ROM
     Single 3.3 V supply
`  High speed
     Normal access time: 150 ns (max)
     Page access time: 50 ns (max)
`  Low power
     Active: 252 mW (max)
     Standby: 108 W (max)
`  Byte-wide or word-wide data organization (Switched by BHE terminal)
`  4 word page access on word-wide mode
`  8 byte page access on byte-wide mode
`  Three-state data output for or-tying
`  Directly LVTTL compatible
     All inputs and outputs


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Value
Unit
Supply voltage
VDD
0.3 to +5.5
V
All input and output voltage*1
Vin, Vout
0.3 to VDD + 0.3
V
Operating temperatue range*1
Topr
0 to +70
°C
Storage temperature range
Tstg
55 to +125
°C
Temperature under bias
Tbias
20 to + 85
°C
Notes:
1. With respect to VSS.


Description

The HN62W4416N is a 16-Mbit CMOS mask-Programmable ROM organized either as 1048576 words by 16 bits or 2097152 words by 8 bits. Realizing low power consumption, this memory is allowed for battery operation. And a high speed access of 150 ns (max) is the most suitable to the system using a high speed micro-computer by 16 bits.




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