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HN62W448N

Features: ` Low voltage operation : 3.3 V ± 0.3 V` Access time: - Normal access time: 120/150 ns (max) - Page access time: 60/70 ns (max)` Low power dissipation - Active: 220 mW (max) - Standby: 3 W (max)` Byte-wide or word-wide data organization (Switched by BHE terminal)` 4-word page access mode...

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SeekIC No. : 004365116 Detail

HN62W448N: Features: ` Low voltage operation : 3.3 V ± 0.3 V` Access time: - Normal access time: 120/150 ns (max) - Page access time: 60/70 ns (max)` Low power dissipation - Active: 220 mW (max) - Standby: 3 W...

HN62W448N Data Sheet

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Part Number:
HN62W448N
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`  Low voltage operation : 3.3 V ± 0.3 V
`  Access time:
     - Normal access time: 120/150 ns (max)
     - Page access time: 60/70 ns (max)
`  Low power dissipation
     - Active: 220 mW (max)
     - Standby: 3 W (max)
`  Byte-wide or word-wide data organization (Switched by BHE terminal)
`  4-word page access mode
`  Three-state data output for wired or-tying
`  Directly LVTTL compatible (All inputs and outputs)


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Value
Unit
Note
Supply voltage
VDD
0.3 to +5.5
V
1
All input and output voltage
Vin, Vout
0.3 to VDD + 0.3
V
1
Operating temperatue range
Topr
0 to +70
°C
  
Storage temperature range
Tstg
55 to +125
°C
  
Temperature under bias
Tbias
20 to + 85
°C
  
Notes:
1. With respect to VSS.



Description

The Hitachi HN62W448N is a 8-Mbit CMOS mask-programmable ROM organized either as 524288-words by 16-bits or as 1048576-words by 8-bits. Realizing low power consumption with low voltage operation, this memory is allowed for battery operation. And low voltage high speed page access of 60/70 ns and normal access of 120/150 ns are realized.




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