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HN62W5432N

Features: • Low voltage operation: 3.3 V ± 0.3 V• High speed Normal access time: 100/120 ns Page access time: 40/50 ns• Low power consumption Active: 120 mA (max) Standby: 200 A (max)• Double word-wide or word-wide data organization with DW/W• 4 double-word page acces...

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SeekIC No. : 004365120 Detail

HN62W5432N: Features: • Low voltage operation: 3.3 V ± 0.3 V• High speed Normal access time: 100/120 ns Page access time: 40/50 ns• Low power consumption Active: 120 mA (max) Standby: 200 A (m...

HN62W5432N Data Sheet

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Part Number:
HN62W5432N
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

• Low voltage operation: 3.3 V ± 0.3 V
• High speed
   Normal access time: 100/120 ns
   Page access time: 40/50 ns
• Low power consumption
   Active: 120 mA (max)
   Standby: 200 A (max)
• Double word-wide or word-wide data organization with DW/W
• 4 double-word page access on double word-wide mode 8 word page access on word-wide mode
• Three-state data output for or-tying
• LVTTL compatible


Description

The HN62W5432N is a 32 Mbit CMOS Mask programmable ROM organized either as 1,048,576 word by 32 bit or as 2,097,152 word by 16 bit. Realizing low power consumption, this memory is allowed for batery operation. And high speed access of 100/120 ns is the most suitable to the system using a high peed micro-computer by 32 bits.




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