HN9C12FT

The HN9C12FT is designed as toshiba transistor silicon NPN epitaxial planar type for VHF, UHF band noise amplifier applications. Two devices are built in to the super-thin and ultra super mini (6 pins) package: TU6.

The HN9C12FT's some absolute maximum ratings have been concluded into several points as follow. (1)Its collector to base voltage would be 20V. (2)Its collector to emitter voltage would be 10V. (3)Its emitter to base voltage would be 3V. (4)Its collector current would be 30mA. (5)Its base current would be 15mA. (6)Its  collector power dissipation would be 200mW. (7)Its junction temperature range would be 125°C. (8)Its storage temperature range would be from -55°C to 125°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of HN9C12FT are concluded as follow. (1)Its collector cutoff current would be max 1uA with conditions of Vcb=10V, Ie=0. (2)Its emitter cutoff current would be max 1uA with conditions of Veb=1V and Ic=0. (3)Its DC current gain would be min 80 and max 240 with conditions of Vce=5V and Ic=5mA. (4)Its transition frequency would be min 4GHz and typ 6GHz with conditions of Vce=5V and Ic=5mA. (5)Its insertion gain would be min 7dB and typ 10dB with conditions of Vce=5V, Ic=5mA and f=1000MHz. (6)Its output capacitance would be typ 0.7pF with conditions of Vce=5V, Ie=0, f=1MHz. (7)Its reverse transfer capacitance would be typ 0.5pF and max 0.9pF with conditions of Vce=5V, Ie=0, f=1MHz.

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