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Part Number: HS-83C55RH
Description: The HS-83C55RH is a radiation hardened ROM and I/O chip fabricated using the Intersil radiation harden...
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HS-83C55RH
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DataSheet
General Description
HS-83C55RH General Description
The HS-83C55RH is a radiation hardened ROM and I/O chip fabricated using the Intersil radiation hardened Self-Aligned Junction Isolated (SAJI) silicon gate technology. Latch-up free operation is achieved by the use of epitaxial starting material to eliminate the parasitic SCR effect seen in conventional bulk CMOS devices.
The HS-83C55RH is intended for use with the HS-80C85RH radiation hardened microprocessor system.
The ROM portion is designed as 16,384 mask programmable cells organized in a 2048 word x 8-bit format. A maximum post irradiation access time of 340ns allows the HS-83C55RH to be used with the HS-80C85RH CPU without any wait states. This ROM is designed for operation utilizing a single 5 volt power supply.
HS-83C55RH Maximum Ratings
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+7.0V
Input, Output or I/O Voltage . . . . . . . . . . . GND-0.3V to VDD+0.3V
Storage Temperature Range . . . . . . . . . . . . . . . . .-65 to +150
Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . .+300
Typical Derating Factor . . . . . . . . . . 1.5mA/MHz Increase in IDDOP
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Input, Output or I/O Voltage . . . . . . . . . . . GND-0.3V to VDD+0.3V
Storage Temperature Range . . . . . . . . . . . . . . . . .-65 to +150
Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . .+300
Typical Derating Factor . . . . . . . . . . 1.5mA/MHz Increase in IDDOP
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
HS-83C55RH Features
• Radiation Hardened EPI-CMOS
- Total Dose 1 x 105 RAD(Si)
- Transient Upset > 1 x 108 RAD(Si)/s (Ports and DDR)
- Latch-Up Free > 1 x 1012 RAD(Si)/s
• 2048 Words x 8 Bits ROM
• Electrically Equivalent to Sandia SA3002
• Pin Compatible with Intel 8355
• Bus Compatible with HS-80C85RH
• Single 5 Volt Power Supply
• Low Standby Current 100A Max
• Low Operating Current 2mA/MHz
• Completely Static Design
• Internal Address Latches
• Two General Purpose 8-Bit I/O Ports
• Multiplexed Address and Data Bus
• Self Aligned Junction Isolated (SAJI) Process
• Military Temperature Range -55 to +125
- Total Dose 1 x 105 RAD(Si)
- Transient Upset > 1 x 108 RAD(Si)/s (Ports and DDR)
- Latch-Up Free > 1 x 1012 RAD(Si)/s
• 2048 Words x 8 Bits ROM
• Electrically Equivalent to Sandia SA3002
• Pin Compatible with Intel 8355
• Bus Compatible with HS-80C85RH
• Single 5 Volt Power Supply
• Low Standby Current 100A Max
• Low Operating Current 2mA/MHz
• Completely Static Design
• Internal Address Latches
• Two General Purpose 8-Bit I/O Ports
• Multiplexed Address and Data Bus
• Self Aligned Junction Isolated (SAJI) Process
• Military Temperature Range -55 to +125
HS-83C55RH Connection Diagram
HS-83C55RH
PDF/DataSheet Download
- Datasheet: HS-83C55RH
- File Size: 725788 KB
- Manufacturer: INTERSIL [Intersil Corporation]
- Click here to Download
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