HSD32M64B8A

Features: • Part IdentificationHSD32M64B8A-F/10L : 100MHz (CL=3)HSD32M64B8A-F/10 : 100MHz (CL=2)HSD32M64B8A-F/12 : 125MHz (CL=3)HSD32M64B8A-F/13 : 133MHz (CL=3)F means Auto & Self refresh with Low-Power (3.3V)• Burst mode operation• Auto & self refresh capability (8192 Cy...

product image

HSD32M64B8A Picture
SeekIC No. : 004366009 Detail

HSD32M64B8A: Features: • Part IdentificationHSD32M64B8A-F/10L : 100MHz (CL=3)HSD32M64B8A-F/10 : 100MHz (CL=2)HSD32M64B8A-F/12 : 125MHz (CL=3)HSD32M64B8A-F/13 : 133MHz (CL=3)F means Auto & Self refresh ...

floor Price/Ceiling Price

Part Number:
HSD32M64B8A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/28

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Part Identification
HSD32M64B8A-F/10L : 100MHz (CL=3)
HSD32M64B8A-F/10 : 100MHz (CL=2)
HSD32M64B8A-F/12 : 125MHz (CL=3)
HSD32M64B8A-F/13 : 133MHz (CL=3)
F means Auto & Self refresh with Low-Power (3.3V)
• Burst mode operation
• Auto & self refresh capability (8192 Cycles/64ms)
• LVTTL compatible inputs and outputs
• Single 3.3V ±0.3V power supply
• MRS cycle with address key programs
- Latency (Access from column address)
- Burst length (1, 2, 4, 8 & Full page)
- Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• The used device is 8M x 8bit x 4Banks Synchronous DRAM





Specifications

Voltage on Any Pin Relative to Vss VIN ,OUT.......... -1V to 4.6V
Voltage on Vcc Supply Relative to Vss Vcc ..............-1V to 4.6V
Power Dissipation PD .....................................................8W
Storage Temperature TSTG .............................-55to 150
Short Circuit Output Current IOS................................ 400mA





Description

The HSD32M64B8A is a 32M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of eight CMOS 32M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The HSD32M64B8A is a SO-DIMM(Small Outline Dual in line Memory Module) and is intended for mounting into 144-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications All module components may be powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.






Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Audio Products
Batteries, Chargers, Holders
Programmers, Development Systems
Line Protection, Backups
View more