HSD32M64D16H

Features: • Part IdentificationHSD32M64D16H-10 : 100MHz (CL=2)HSD32M64D16H-10L : 100MHz (CL=3)HSD32M64D16H-13 : 133MHz (CL=3)• Burst mode operation• Auto & self refresh capability (4096 Cycles/64ms)• LVTTL compatible inputs and outputs• Single 3.3V ±0.3V power sup...

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SeekIC No. : 004366013 Detail

HSD32M64D16H: Features: • Part IdentificationHSD32M64D16H-10 : 100MHz (CL=2)HSD32M64D16H-10L : 100MHz (CL=3)HSD32M64D16H-13 : 133MHz (CL=3)• Burst mode operation• Auto & self refresh capabil...

floor Price/Ceiling Price

Part Number:
HSD32M64D16H
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/4/28

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Product Details

Description



Features:

• Part Identification
HSD32M64D16H-10 : 100MHz (CL=2)
HSD32M64D16H-10L : 100MHz (CL=3)
HSD32M64D16H-13 : 133MHz (CL=3)
• Burst mode operation
• Auto & self refresh capability (4096 Cycles/64ms)
• LVTTL compatible inputs and outputs
• Single 3.3V ±0.3V power supply
• MRS cycle with address key programs
- Latency (Access from column address)
- Burst length (1, 2, 4, 8 & Full page)
- Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• The used device is 4M x 8bit x 4Banks SDRAM



Specifications

Voltage on Any Pin Relative to Vss VIN ,OUT ......-1V to 4.6V
Voltage on Vcc Supply Relative to Vss Vcc......... -1V to 4.6V
Power Dissipation PD .....................................................8W
Storage Temperature TSTG........................... -55 to 150
Short Circuit Output Current IOS................................ 50mA



Description

The HSD32M64D16H is a 32M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of sixteen CMOS 4M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 168-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The HSD32M64D16H is a DIMM(Dual in line Memory Module) and is intended for mounting into 168-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications All module components may be powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.




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