HSD32M64F8R

Features: • Part IdentificationHSD32M64F8R-10L : 100MHz (CL=3)HSD32M64F8R-10 : 100MHz (CL=2)HSD32M64F8R-13 : 133MHz (CL=3)• Burst mode operation• Auto & self refresh capability (8K Cycles/64ms)• LVTTL compatible inputs and outputs• Single 3.3V ±0.3V power supply&#...

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SeekIC No. : 004366019 Detail

HSD32M64F8R: Features: • Part IdentificationHSD32M64F8R-10L : 100MHz (CL=3)HSD32M64F8R-10 : 100MHz (CL=2)HSD32M64F8R-13 : 133MHz (CL=3)• Burst mode operation• Auto & self refresh capability...

floor Price/Ceiling Price

Part Number:
HSD32M64F8R
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

• Part Identification
HSD32M64F8R-10L : 100MHz (CL=3)
HSD32M64F8R-10 : 100MHz (CL=2)
HSD32M64F8R-13 : 133MHz (CL=3)
• Burst mode operation
• Auto & self refresh capability (8K Cycles/64ms)
• LVTTL compatible inputs and outputs
• Single 3.3V ±0.3V power supply
• MRS cycle with address key programs
- Latency (Access from column address)
- Burst length (1, 2, 4, 8 & Full page)
- Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• The used device is 4M x 16bit x 4Banks SDRAM



Specifications

Parameter
Symbol
Ratings
Unit
Voltage on any pin relative to VSS
VIN, VOUT
-1 to 4.6
V
Voltage on VCC supply relative to VSS
VCC
-1 to 4.6
V
Storage Temperature
TSTG
-55 to +150
°C
Power Dissipation
PD
8
W
Short Circuit Current
IOS
50
mA
Notes:
Permanent device damage may occur if " Absolute Maximum Ratings" are exceeded. Functional operation should be
restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.



Description

The HSD32M64F8R is a 32M x 64 bit Synchronous Dynamic RAM high-density memory module. The module consists of eight CMOS 16M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages and 2K EEPROM in 8-pin TSSOP package on a 120-pin glass-epoxy. Three 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The HSD32M64F8R is a SMM(Stackable Memory Module type) .Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications All module components may be powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.




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