Features: • Very Low Insertion loss over entire frequency range• Super High Isolation over entire frequency range• High Input IP3, +55 dBm typ.• Single positive supply voltage, +3V• Very low DC current consumption, 8A• Immune to latch up• Unique design-sim...
HSWA2-30DR+: Features: • Very Low Insertion loss over entire frequency range• Super High Isolation over entire frequency range• High Input IP3, +55 dBm typ.• Single positive supply voltag...
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Parameter | Ratings |
Operating Temperature | -40 to 85 |
Storage Temperature | -65 to 150 |
VDD, Supply Voltage | -0.3V Min., 4V Max. |
Voltage control | -0.3V Min., VDD + 0.3V Max. |
ESD, HBM (ANSI/ESD STM 5.1 - 2001) | 250V to < 500V (CLASS 1A) |
ESD, MM (ANSI/ESD STM 5.2 - 1999) | 50V (CLASS M1) |
RF input power: (note 8) When the common port is connected to the RF port (RF1 or RF2) When the RF port (RF1 or RF2) is not connected to the common port When the common port is not connected to either RF1 or RF2 |
+33dBm +24dBm +24dBm |
The HSWA2-30DR+ is a 50 high isolation SPDT RF switch designed for wireless applications, covering a broad frequency range from DC up to 3GHz with low insertion loss. The HSWA2 30DR+ operates on a single supply voltage +3V. See application note AN-80-006 for +5V supply voltage. This unit includes an internal CMOS control driver with two-pins control. The switch consumes very low supply current, 8 A typ. The HSWA2-30DR+ switch is in a very small size and low profile package, 4x4mm and 0.9mm respectively.