HTNFET-D

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: -
Power - Max: 50W
Mounting Type: Through Hole
Packaging: Bulk
Drain to Source Voltage (Vdss): 55V
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Series: HTMOS™
Manufacturer: Honeywell Microelectronics & Precision Sensors
Rds On (Max) @ Id, Vgs: 400 mOhm @ 100mA, 5V
Gate Charge (Qg) @ Vgs: 4.3nC @ 5V
Input Capacitance (Ciss) @ Vds: 290pF @ 28V
Package / Case: 8-CDIP Exposed Pad
Supplier Device Package: 8-CDIP-EP


Parameters:

Technical/Catalog Information	HTNFET-D
Vendor	Honeywell Microelectronics & Precision Sensors
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	-
Rds On (Max) @ Id, Vgs	400 mOhm @ 100mA, 5V
Input Capacitance (Ciss) @ Vds	290pF @ 28V
Power - Max	50W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	4.3nC @ 5V
Package / Case	8-DIP
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	HTNFET D HTNFETD 342 1078 ND 3421078ND 342-1078