FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: -
Power - Max: 50W
Mounting Type: Through Hole
Packaging: Bulk
Drain to Source Voltage (Vdss): 55V
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Series: HTMOS™
Manufacturer: Honeywell Microelectronics & Precision Sensors
Rds On (Max) @ Id, Vgs: 400 mOhm @ 100mA, 5V
Gate Charge (Qg) @ Vgs: 4.3nC @ 5V
Input Capacitance (Ciss) @ Vds: 290pF @ 28V
Package / Case: 8-CDIP Exposed Pad
Supplier Device Package: 8-CDIP-EP
Parameters: | Technical/Catalog Information | HTNFET-D |
| Vendor | Honeywell Microelectronics & Precision Sensors |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | - |
| Rds On (Max) @ Id, Vgs | 400 mOhm @ 100mA, 5V |
| Input Capacitance (Ciss) @ Vds | 290pF @ 28V |
| Power - Max | 50W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 4.3nC @ 5V |
| Package / Case | 8-DIP |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | HTNFET D
HTNFETD
342 1078 ND
3421078ND
342-1078
|
HTNFET-D Data Sheet
