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HTNFET-T

MOSFET N-CHANNEL 55V 4-PIN

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SeekIC No. : 003431540 Detail

HTNFET-T: MOSFET N-CHANNEL 55V 4-PIN

HTNFET-T Data Sheet

floor Price/Ceiling Price

US $ 198.75~198.75 / Piece | Get Latest Price
Part Number:
HTNFET-T
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • Unit Price
  • $198.75
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Series: HTMOS™ Manufacturer: Honeywell Microelectronics & Precision Sensors
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Standard
Drain to Source Voltage (Vdss): 55V Continuous Drain Current : 2.1 A
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: -
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 400 mOhm @ 100mA, 5V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2.4V @ 100µA Gate Charge (Qg) @ Vgs: 4.3nC @ 5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 290pF @ 28V
Power - Max: 50W Mounting Type: Through Hole
Package / Case: 4-SIP Supplier Device Package: 4-Power Tab    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: -
Power - Max: 50W
Mounting Type: Through Hole
Packaging: Bulk
Drain to Source Voltage (Vdss): 55V
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Series: HTMOS™
Manufacturer: Honeywell Microelectronics & Precision Sensors
Rds On (Max) @ Id, Vgs: 400 mOhm @ 100mA, 5V
Gate Charge (Qg) @ Vgs: 4.3nC @ 5V
Input Capacitance (Ciss) @ Vds: 290pF @ 28V
Package / Case: 4-SIP
Supplier Device Package: 4-Power Tab


Parameters:

Technical/Catalog InformationHTNFET-T
VendorHoneywell Microelectronics & Precision Sensors
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C-
Rds On (Max) @ Id, Vgs400 mOhm @ 100mA, 5V
Input Capacitance (Ciss) @ Vds 290pF @ 28V
Power - Max50W
PackagingBulk
Gate Charge (Qg) @ Vgs4.3nC @ 5V
Package / Case4-DIP
FET FeatureStandard
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names HTNFET T
HTNFETT



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