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HUF75309D3ST

MOSFET 19a 55V N-Channel UltraFET

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SeekIC No. : 00160927 Detail

HUF75309D3ST: MOSFET 19a 55V N-Channel UltraFET

HUF75309D3ST Data Sheet

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Part Number:
HUF75309D3ST
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 19 A
Resistance Drain-Source RDS (on) : 0.07 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 55 V
Package / Case : TO-252
Continuous Drain Current : 19 A
Resistance Drain-Source RDS (on) : 0.07 Ohms


Parameters:

Technical/Catalog InformationHUF75309D3ST
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C19A
Rds On (Max) @ Id, Vgs70 mOhm @ 19A, 10V
Input Capacitance (Ciss) @ Vds 350pF @ 25V
Power - Max55W
PackagingTube
Gate Charge (Qg) @ Vgs24nC @ 20V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HUF75309D3ST
HUF75309D3ST



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