MFG:HAR Package Cooled:2000
MFG: HAR
Package Cooled: 2000
Description: This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technol...
| Drain to Source Voltage (Note 1). . . . . . . . . . . . . VDSS | 30 | V |
| Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . .VDGR | 30 | V |
| Gate to Source Voltage . . . . . . . . . . . . VGS | ±16 | V |
| Drain Current | ||
| Continuous (TA= 25, VGS = 10V) (Figure 2)(Note 2). . . . ID |
6.5 | A |
| Continuous (TA= 100, VGS = 5V) (Note 3) . . . . . . . . . . ID | 2.0 | A |
| Continuous (TA= 100, VGS = 4.5V)(Note 3) . . .. . . . . . ID | 2.0 | A |
| Pulsed Drain Current . . . . . . .. . . . . IDM | Figure 4 | |
| Pulsed Avalanche Rating. . . . . . . . . . EAS | Figures 6 | |
| Power Dissipation(Note 2) . . . . . . . . .. . . . PD |
2.5 | W |
| Derate Above 25 . . . . . . . . . . . . . . . . . . | 20 | W/ |
| Operating and Storage Temperature . . . . . . . . . . . TJ, TSTG | -55 to 150 | |
| Maximum Temperature for Soldering | ||
| Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . TL | 300 | |
| Package Body for 10s, See Techbrief 334. . . . . . . .Tpkg | 260 |
HUF76113SK8
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