Features: · High Power Stud Mount Package.· High Zero Bias Impedance· Very Low Inductance and Capacitance.· No Internal Lead Straps.· Small Mechanical Outline.ApplicationMRI Applications.High Power Antenna Switching.Specifications Parameter Symbol TYPE Unit HUM2001 HUM2005 HUM2010 HU...
HUM2001: Features: · High Power Stud Mount Package.· High Zero Bias Impedance· Very Low Inductance and Capacitance.· No Internal Lead Straps.· Small Mechanical Outline.ApplicationMRI Applications.High Power ...
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| Parameter | Symbol | TYPE | Unit | ||||
| HUM2001 | HUM2005 | HUM2010 | HUM2015 | HUM2020 | |||
| Maximum Reverse Voltage Average Power Dissipation @ Stud =50°C Non-Repetitive Sinusoidal Surge Current (8.3 ms) |
TRWM IO I |
100 13 100 |
100 13 100 |
1000 13 100 |
1500 13 100 |
2000 13 100 |
V W A |
| Storage Temperature Range Operating Temperature Range |
TSTG TSTG |
-65 to +175 -55 to +150 |
-65 to +175 -55 to +150 |
-65 to +175 -55 to +150 |
-65 to +175 -55 to +150 |
-65 to +175 -55 to +150 |
|
| Thermal resistance Junction-to Case "C" Stud only |
RJC | 7.5 | 7.5 | 7.5 | 7.5 | 7.5 | /W |
With high isolation, low loss, and low distortion characteristics, this Microsemi Power PIN diode HUM2001 is perfect for the high power switching applications where size and power handling capability are critical.
HUM2001's advantages also include the low forward bias resistance and high zero bias impedance that are essential for low loss, high isolation and wide bandwidth performance.
Hermetically sealed, SOGO passivated PIN chips HUM2001 with full-faced etallurgical bonds on both sides to achieve high reliability and high surge capability.