HV400MJ_883

The HV400MJ_883 is a single monolithic, non-inverting high current driver designed to drive large capacitive loads at high slew rates. The device is optimized for driving single or parallel connected N-Channel power MOSFETs with total gate charge from 5nC to >1000nC. It features two output stages pinned out separately allowing independent control of the MOSFET gate rise and fall times. The current sourcing output stage is an NPN capable of 6A. An SCR provides over 30A of current sinking. The HV400MJ/883 achieves rise and fall times of 54ns and 16ns respectively driving a 10,000pF load.

Special HV400MJ_883 features are included in this part to provide a simple, high speed gate drive circuit for power MOSFETs. The HV400MJ/883 requires no quiescent supply current, however, the input current is approximately 15mA while in the high state. With the internal current steering diodes (Pin 7) and an external capacitor, both the timing and MOSFET gate power come from the same pulse transformer; no special external supply is required for high side switches. No high voltage diode is required to charge the bootstrap capacitor.

The HV400MJ_883 in combination with the MOSFET and pulse transformer makes an isolated power switch building block for applications such as high side switches, secondary side regulation and synchronous rectification. The  HV400MJ/883 is also suitable for driving IGBTs, MCTs, BJTs and small GTOs.

The HV400MJ_883 is a type of buffer; it does not have input logic level switching threshold voltages. This single stage design achieves propagation delays of 20ns. The output NPN begins to source current when the voltage on Pin 2 is approximately 2V more positive than the voltage at Pin 8.

About HV400MJ_883,the output SCR switches on when the input Pin 2 is 1V more negative than the voltage at Pins 3/6. Due to the use of the SCR for current sinking, once the output switches low, the input must not go high again until all the internal SCR charge has dissipated, 0.5ms - 1.5ms later.