HVV1012-060

Features: • High Power Gain• Excellent Ruggedness• 48V Supply VoltageDescriptionThe high power HVV1012-060 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed avionics applications operating over the frequency range from 1025MHz to 1150MHz.

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SeekIC No. : 004367941 Detail

HVV1012-060: Features: • High Power Gain• Excellent Ruggedness• 48V Supply VoltageDescriptionThe high power HVV1012-060 device is a high voltage silicon enhancement mode RF transistor designed ...

floor Price/Ceiling Price

Part Number:
HVV1012-060
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

• High Power Gain
• Excellent Ruggedness
• 48V Supply Voltage



Description

The high power HVV1012-060 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed avionics applications operating over the frequency range from 1025MHz to 1150MHz.




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