HVV1011-035

      The HVV1011-035 has the following features including  high power gain;excellent ruggedness;48V supply voltage.
      The high power HVV1011-035 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed avionics applications operating over the frequency range from 1030 MHz to 1090 MHz.|Ruggedness|The HVV1011-035 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR at all phase angles and rated output power and operating voltage across the frequency band of operation.
      Using its High Voltage Vertical Field Effect Transistor (HVVFET) architecture, HVVi Semiconductor introduced the HVV1011-035, a 35 W surface mount RF power transistor for IFF, TCAS and Mode-S applications, and the HVV1214-200, a 200 W RF power transistor for gound-based radar applications. The new devices are designed to operate at 48 V.According to the company, the HVVFET technology's gain, efficiency and impedance performance allow designers to eliminate amplification stages in power amplifiers, reduce parts count and shrink PCB space requirements, while its ruggedness is said to allow radar and avionics designers to eliminate isolators and, in the process, reduce system weight, size and cost. International Rectifier introduced a 25 V synchronous buck converter DirectFET MOSFET chipset for point-of-load (PoL) converter designs as well as server, high-end desktop and notebook computer applications. The chipset HVV1011-035 combines the company's HEXFET MOSFET silicon and DirectFET packaging technology to provide a high density, single control and synchronous MOSFET solution in the footprint of an SO-8, and with a 0.7 mm profile.These recently introduced solid state switching devices offer designers a variety of features ranging from very high frequency operation to savings in power to very small package sizes. As always, we present them side-by side to help you view the specs at-a-glance.
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