HWC27NC

Features: • Low Cost GaAs Power FET• Class A or Class AB Operation• 11 dB Typical Gain at 4 GHz• 5V to 10V OperationSpecifications VDS Drain to Source Voltage +15V VGS Gate to Source Voltage -5 V ID Drain Current IDSS IG Gate Current 2m...

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HWC27NC Picture
SeekIC No. : 004367961 Detail

HWC27NC: Features: • Low Cost GaAs Power FET• Class A or Class AB Operation• 11 dB Typical Gain at 4 GHz• 5V to 10V OperationSpecifications VDS Drain to Source Voltage +15V...

floor Price/Ceiling Price

Part Number:
HWC27NC
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

• Low Cost GaAs Power FET
• Class A or Class AB Operation
• 11 dB Typical Gain at 4 GHz
• 5V to 10V Operation





Specifications

VDS
Drain to Source Voltage
+15V
VGS
Gate to Source Voltage
-5 V
ID
Drain Current
IDSS
IG
Gate Current
2mA
TCH
Channel Temperature
175
TSTG
Storage Temperature
- 65 to +175
PT
Power Dissipation
2mA
* mounted on an infinite heat sink




Description

The HWC27NC is a medium power GaAs FET designed for various L-band & S-band applications.






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