HWC27YC

Features: • Low Cost GaAs Power FET• Class A or Class AB Operation• 18 dB Typical Gain at 2.4GHz• 5V to 10V OperationSpecifications VDS Drain to Source Voltage +15V VGS Gate to Source Voltage -5V ID Drain Current IDSS IG Gate Current 2mA TCH Channe...

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SeekIC No. : 004367962 Detail

HWC27YC: Features: • Low Cost GaAs Power FET• Class A or Class AB Operation• 18 dB Typical Gain at 2.4GHz• 5V to 10V OperationSpecifications VDS Drain to Source Voltage +15V ...

floor Price/Ceiling Price

Part Number:
HWC27YC
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/4/26

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Product Details

Description



Features:

• Low Cost GaAs Power FET
• Class A or Class AB Operation
• 18 dB Typical Gain at 2.4GHz
• 5V to 10V Operation





Specifications

VDS Drain to Source Voltage +15V
VGS Gate to Source Voltage -5V
ID Drain Current IDSS
IG Gate Current 2mA
TCH Channel Temperature 175
TSTG Storage Temperature -65 to +175
PT* Power Dissipation 3.5W





Description

The HWC27YC is a medium power GaAs FET designed for various RF and microwave applications.




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