HWF1686YC

Features: ·Output Power: P1dB=30dBm(typ.)·High Gain: GL=16dB(typ.)·High Efficiency: PAE=45%(typ.)·High Linearity: IP3=45dBm(typ.)Specifications VDSVGSIDIGTCHTSTGPT* Drain to Source Voltage Gate to Source VoltageDrain CurrentGate CurrentChannel TemperatureStorage TemperaturePower Dissipat...

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SeekIC No. : 004367984 Detail

HWF1686YC: Features: ·Output Power: P1dB=30dBm(typ.)·High Gain: GL=16dB(typ.)·High Efficiency: PAE=45%(typ.)·High Linearity: IP3=45dBm(typ.)Specifications VDSVGSIDIGTCHTSTGPT* Drain to Source Voltage...

floor Price/Ceiling Price

Part Number:
HWF1686YC
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/4/27

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Product Details

Description



Features:

·Output Power: P1dB=30dBm(typ.)
·High Gain: GL=16dB(typ.)
·High Efficiency: PAE=45%(typ.)
·High Linearity: IP3=45dBm(typ.)





Specifications

VDS
VGS
ID
IG
TCH
TSTG
PT
*
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Channel Temperature
Storage Temperature
Power Dissipation
+15V
-5V
IDSS
2mA
175°C
-65 to +175°C
5.4W
* mounted on an infinite heat sink




Description

Designed for various RF and Microwave applications, the HWF1686YC is a medium power GaAs MESFET chip with 2 mm gate width and 0.7 m gate length.






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