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HY27SS16121M

Features: · HIGH DENSITY NAND FLASH MEMORIES- Cost effective solutions for mass storage applications· NAND INTERFACE- x8 or x16 bus width.- Multiplexed Address/ Data- Pinout compatibility for all densities· SUPPLY VOLTAGE- 3.3V device: VCC = 2.7 to 3.6V : HY27USXX561M- 1.8V device: VCC = 1.7 to 1....

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SeekIC No. : 004368156 Detail

HY27SS16121M: Features: · HIGH DENSITY NAND FLASH MEMORIES- Cost effective solutions for mass storage applications· NAND INTERFACE- x8 or x16 bus width.- Multiplexed Address/ Data- Pinout compatibility for all de...

HY27SS16121M Data Sheet

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Part Number:
HY27SS16121M
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· HIGH DENSITY NAND FLASH MEMORIES
- Cost effective solutions for mass storage applications
· NAND INTERFACE
- x8 or x16 bus width.
- Multiplexed Address/ Data
- Pinout compatibility for all densities
· SUPPLY VOLTAGE
- 3.3V device: VCC = 2.7 to 3.6V : HY27USXX561M
- 1.8V device: VCC = 1.7 to 1.95V : HY27SSXX561M
· Memory Cell Array
- 256Mbit = 528 Bytes x 32 Pages x 2,048 Blocks
· PAGE SIZE
- x8 device : (512 + 16 spare) Bytes
: HY27US08561M
- x16 device: (256 + 8 spare) Words
: HY27US16561M
· BLOCK SIZE
- x8 device: (16K + 512 spare) Bytes
- x16 device: (8K + 256 spare) Words
· PAGE READ / PROGRAM
- Random access: 10us (max)
- Sequential access: 50ns (min)
- Page program time: 200us (typ)
· COPY BACK PROGRAM MODE
- Fast page copy without external buffering
· FAST BLOCK ERASE
- Block erase time: 2ms (Typ)
· STATUS REGISTER
· ELECTRONIC SIGNATURE
· CHIP ENABLE DON'T CARE OPTION
- Simple interface with microcontroller
· AUTOMATIC PAGE 0 READ AT POWER-UP
· OPTION
- Boot from NAND support
- Automatic Memory Download
· SERIAL NUMBER OPTION
· HARDWARE DATA PROTECTION
- Program/Erase locked during Power transitions
· DATA INTEGRITY
- 100,000 Program/Erase cycles
- 10 years Data Retention
· PACKAGE
- HY27US(08/16)561M-T(P)
: 48-Pin TSOP1 (12 x 20 x 1.2 mm)
- HY27US(08/16)561M-T (Lead)
- HY27US(08/16)561M-TP (Lead Free)
- HY27US08561M-V(P)
: 48-Pin WSOP1 (12 x 17 x 0.7 mm)
- HY27US08561M-V (Lead)
- HY27US08561M-VP (Lead Free)
- HY27(U/S)S(08/16)561M-F(P)
: 63-Ball FBGA (9.0 x 11 x 1.0 mm)
- HY27US(08/16)561M-F (Lead)
- HY27US(08/16)561M-FP (Lead Free)
- HY27SS(08/16)561M-F (Lead)
- HY27SS(08/16)561M-FP (Lead Free)


Pinout

Connection Diagram


Specifications

Symbol Parameter NAND Flash
Min         Max		 Unit
TBIAS Temperature Under Bias -50 125 oC
TSTG Storage Temperature -65 150 oC
VIO(1) Input or Output Voltage 1.8V devices
3.3 V devices		 -0.6 2.7
4.6
 V
VCC Supply Voltage 1.8V devices
3.3 V devices		 -0.6 2.7
4.6		 V



Description

The HYNIX HY27SS16121M series is a family of non-volatile Flash memories that use NAND cell technology. The devices operate 3.3V and 1.8V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width.

The HY27SS16121M address lines are multiplexed with the Data Input/ Output signals on a multiplexed x8 or x16 Input/ Output bus. This interface reduces the pin count and makes it possible to migrate to other densities without changing the footprint.

Each block can be programmed and erased over 100,000 cycles. To extend the lifetime of NAND Flash devices HY27SS16121M it is strongly recommended to implement an Error Correction Code (ECC). A Write Protect pin is available to give a hardware protection against program and erase operations.

The devices HY27SS16121M feature an open-drain Ready/Busy output that can be used to identify if the Program/ Erase/Read (PER) Controller is currently active. The use of an open-drain output allows the Ready/ Busy pins from several memories to be connected to a single pull-up resistor.

A Copy Back command is available from HY27SS16121M to optimize the management of defective blocks. When a Page Program operation fails, the data can be programmed in another page without having to resend the data to be programmed.




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