HY27UH088GDM

The HYNIX HY27UH088GDM series is a 1Gx8bit with spare 32Mx8 bit capacity. The device is offered in 3.3V Vcc Power Supply.

HY27UH088GDM's NAND cell provides the most cost-effective solution for the solid state mass storage market.

The memory HY27UH088GDM is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.

The device HY27UH088GDM contains 8192 blocks, composed by 64 pages consisting in two NAND structures of 32 series connected Flash cells.

A program operation allows to write the 2112-byte page in typical 200us and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device) block.

Data in the page mode can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. This HY27UH088GDM interface allows a reduced pin count and easy migration towards different densities, without any rearrangement of footprint.

Commands, Data and Addresses are synchronously introduced using CE#, WE#, ALE and CLE input pin.

The HY27UH088GDM on-chip Program/Erase Controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data.

The modifying can be locked using the WP# input pin.

The output pin RB# (open drain buffer) signals the status of the device HY27UH088GDM during each operation. In a system with multiple memories the RB# pins can be connected all together to provide a global status signal.

Even the write-intensive systems can take advantage of the HY27UH088GDM extended reliability of 100K program/ erase cycles by providing ECC (Error Correcting Code) with real time mapping-out algorithm.

Optionally the chip HY27UH088GDM could be offered with the CE# don't care function. This option allows the direct download of the code from the NAND Flash memory device by a microcontroller, since the CE# transitions do not stop the read operation.

The HY27UH088GDM copy back function allows the optimization of defective blocks management: when a page program operation fails the data can be directly programmed in another page inside the same array section without the time consuming serial data insertion phase.

The cache program feature allows the data insertion in the cache register while the data register is copied into the flash array. This pipelined program operation improves the program throughput when long files are written inside the memory HY27UH088GDM.

A cache read feature is also implemented. This HY27UH088GDM feature allows to dramatically improve the read throughput when consecutive pages have to be streamed out.

This device HY27UH088GDM includes also extra features like OTP/Unique ID area, Block Lock mechanism, Automatic Read at Power Up, Read ID2 extension.

The HYNIX HY27UH088GDM series is available in 48 - TSOP1 12 x 20 mm, 52-TLGA 12 x 17mm.