HY57V643220DTP-6

The HY57V643220DTP-6 belongs to the HY57V643220DTP series. It is a kind of 4 Banks x 512 K x 32 bits synchronous DRAM. It is suitable for the memoryapplications which require wide data I/O and high bandwidth. It includes fully synchronous operation referenced to a positive edge of the clock and it is available in the 86pin TSOP-II package which is Pb-free.

There are some features as follows. (1) all device pins are compatible with LVTTL interface; (2) all inputs and outputs referenced to positive edge of system clock; (3) data mask function by DQM 0,1,2 and DQM 3; (4) internal four banks operation; (5) auto refresh and self refresh; (6) 4096 refresh cycles/64ms; (7) programmable burst length and burst type; (8) programmable CAS latency; (9) burst read single write operation.

The following is some information about its absolute maximum ratings. (1): ambient temperature (TA) which is from -40 to 85 ; (2): storage temperature (TSTG) is from -55 to 125 ; (3): voltage on any pin relative to VSS (VIN,VOUT) is from -1.0 V to 4.6 V; (4): voltage on VDD relative to VSS (VDD) is from -1.0 V to 4.6 V; (5):
voltage on VDDQ relative to VSS (VDDQ) ranges from -1.0 V to 4.6 V; (6): short circuit output current (IOS) is 50 mA; (7): power dissipation (PD) is 1 W; (8): soldering temperature.time is 260.10 .sec; (9): the minimum input capacitance on CLK pin is 2.5 pF and the maximum is 3.5 pF; (10): the minimum data input/output capacitance on DQ1-DQ31 pin is 4 pF and the maximum is 6.5 pF.