MFG:HYNIX Package Cooled:2001 D/C:BGA
MFG: HYNIX
Package Cooled: 2001
D/C: BGA
Description: The Hynix HY5V22G is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applicatio...
The Hynix HY5V22G is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY5V22G is organized as 4banks of 1,048,576x32.
HY5V22G is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are
synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output voltage levels are compatible with LVTTL.
Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive read or write cycles initiated by a single control command (Burst length of 1,2,4,8 or full page), and the burst count sequence(sequential or interleave). A burst of read or write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a new burst read or write command on any cycle. (This pipelined design is not restricted by a `2N` rule.)
|
Parameter |
Symbol |
Rating |
Unit |
| Ambient Temperature |
TA |
0 ~ 70 |
|
| Storage Temperature |
TSTG |
-55 ~ 125 |
|
| Voltage on Any Pin relative to VSS |
VIN, VOUT |
-1.0 ~ 4.6 |
V |
| Voltage on VDD relative to VSS |
VDD, VDDQ |
-1.0 ~ 4.6 |
V |
| Short Circuit Output Current |
IOS |
50 |
mA |
| Power Dissipation |
PD |
1 |
W |
| Soldering Temperature . Time |
TSOLDER |
260.10 |
. Sec |
HY50P
PDF/DataSheet Download
The Hynix HY57V283220(L)T(P) / HY5V22(L)F(P) is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth.It is organized as 4banks of 1,048,576x32. HY57V283220(L)T(P) / HY5V22(L)F(P) ...
The Hynix Low Power SDRAM HY5S6B6Sis suited for non-PC application which use the batteries such as PDAs, 2.5G and 3G cellular phones with internet access and multimedia capabilities, mini-notebook, handheld PCs.The Hynix HY5S6B6S is a 67,108,864bit CMOS Sync...
The Hynix Low Power SDRAM HY5S6B6L is suited for non-PC application which use the batteries such as PDAs, 2.5G and 3G cellular phones with internet access and multimedia capabilities, mini-notebook, handheld PCs.The Hynix HY5S6B6L is a 67,108,864bit CMOS Syn...
The Hynix Low Power SDRAM HY5S6B6D is suited for non-PC application which use the batteries such as PDAs, 2.5G and 3G cellular phones with internet access and multimedia capabilities, mini-notebook, handheld PCs.The Hynix HY5S6B6D(L/S)F(P) is a 67,108,864bit...
Price: 1-10 USD
TA7681AP - TELEVISION PIF SIF SYSTEM - Toshiba Semiconductor
Price: 50-80 USD
1200V, 50A, PIM module, Converter diode bridge, 7MBR50SB120, Fuji Electric
Price: 0.2-0.5 USD
30V, Color TV Vertical Deflection Output Circuit, 8.0W, monolithic linear IC
Price: 1-4 USD
24WC02J, CSI, sop8, 2Kbit, CMOS E2PROM, 256 words, –2.0V to +VCC + 2.0V
Price: 0.072-0.075 USD
Surface Mount, RF Schottky Barrier, SOT-143, Low Turn-On Voltage, Low FIT, Single, Dual and Quad V...
Price: 1.5-2 USD
540-025, High Volume, Low Series Resistance, 100 GHz, 1 mA, 780mV, 100GHz
Price: 18-20 USD
Video Chip, BGA, 2.7 V to 5.5 V, 400KHz, 0.12mA, 400mW, NF-6100-405-N-A2
Price: 1.5-2 USD
precision quad operational amplifier, SOP16, ±22V, 5mA, Low Voltage Noise, 0.1Hz to 10Hz, 0.55μVp-p
Price: 5-6 USD
H9730#50, DIP, Agilent Technologies, Optoelectronics
Price: 0.78-0.85 USD
2-Mbit (128K x 16), Pseudo Static RAM, BGA-48, Ultra low standby power, Automatic power-down
Price: 1-2 USD
HEF4001BP - Quadruple 2-input NOR gate - NXP Semiconductors
Price: 0.1-1 USD
Laser Diode Driver, QFN, Intersil Corporation, EL6939CLZ
