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Part Number: HY62256A-I

 

 

 

 

Description: The HY62256A/HY62256A-I is a high-speed, low power and 32,786 x 8-bits CMOS Static Random Access Memor...


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HY62256A-I General Description


The HY62256A/HY62256A-I is a high-speed, low power and 32,786 x 8-bits CMOS Static Random Access Memory fabricated using Hyundai's high performance CMOS process technology. The  HY62256A/HY62256A-I has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.0 volt. Using the CMOS technology, supply voltages from 2.0 to 5.5 volt has little effect on supply current in the data retention mode. The HY62256A/HY62256A-I is suitable for use in low voltage operation and battery back-up application.

HY62256A-I Maximum Ratings

Symbol Parameter Rating Unit Remark
VCC VIN
VOUT
Power Supply Input/Output
Voltage
-0.5 to 7.0 V  
TA Operating Temperature 0 to 70 HY62256A
  -40 to 85 HY62256A-I
TSTG Storage Temperature -65 to 150  
PD Power Dissipation 1.0 W  
IOUT Data OutPut Current 50 mA  
TSOLDER Lead Soldering Temperature
& Time
260 /10 / sec  

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and the functional operation of the device under these or any other conditions above those indicated in the operation of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect reliability.

HY62256A-I Features

·Fully static operation and
Tri-state outputs
·TTL compatible inputs
and outputs
·Low power consumption
-2.0V(min.) data
retention
·Standard pin
configuration
-28 pin 600 mil PDIP
-28 pin 330 mil SOP
-28 pin 8x13.4 mm
TSOP-1
(standard and reversed)

HY62256A-I datasheet

HY62256A
PDF/DataSheet Download

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