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Part Number: HY62256A-I
Description: The HY62256A/HY62256A-I is a high-speed, low power and 32,786 x 8-bits CMOS Static Random Access Memor...


Description: The HY62256A/HY62256A-I is a high-speed, low power and 32,786 x 8-bits CMOS Static Random Access Memor...
The HY62256A/HY62256A-I is a high-speed, low power and 32,786 x 8-bits CMOS Static Random Access Memory fabricated using Hyundai's high performance CMOS process technology. The HY62256A/HY62256A-I has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.0 volt. Using the CMOS technology, supply voltages from 2.0 to 5.5 volt has little effect on supply current in the data retention mode. The HY62256A/HY62256A-I is suitable for use in low voltage operation and battery back-up application.
| Symbol | Parameter | Rating | Unit | Remark |
| VCC VIN VOUT |
Power Supply Input/Output Voltage |
-0.5 to 7.0 | V | |
| TA | Operating Temperature | 0 to 70 | HY62256A | |
| -40 to 85 | HY62256A-I | |||
| TSTG | Storage Temperature | -65 to 150 | ||
| PD | Power Dissipation | 1.0 | W | |
| IOUT | Data OutPut Current | 50 | mA | |
| TSOLDER | Lead Soldering Temperature & Time |
260 /10 | / sec |
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and the functional operation of the device under these or any other conditions above those indicated in the operation of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect reliability.
HY62256A
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