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MFG:HY  Package Cooled:96  D/C:DIP-28  

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Part Number: HY62256A

 

MFG: HY

Package Cooled: 96

D/C: DIP-28

Description: The HY62256A/HY62256A-I is a high-speed, low power and 32,786 x 8-bits CMOS Static Random Access Memor...


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HY62256A General Description


The HY62256A/HY62256A-I is a high-speed, low power and 32,786 x 8-bits CMOS Static Random Access Memory fabricated using Hyundai's high performance CMOS process technology. The HY62256A/HY62256A-I has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.0 volt. Using the CMOS technology, supply voltages from 2.0 to 5.5 volt has little effect on supply current in the data retention mode. The HY62256A/HY62256A-I is suitable for use in low voltage operation and battery back-up application.

HY62256A Maximum Ratings

Symbol
Parameter
Rating
Unit
Remark
VCC VIN
VOUT
Power Supply Input/Output
Voltage
-0.5 to 7.0
V
TA
Operating Temperature
0 to 70
°C
HY62256A
-40 to 85
°C
HY62256A-I
TSTG
Storage Temperature
-65 to 150
°C
PD
Power Dissipation
1.0
W
IOUT
Data OutPut Current
50
mA
TSOLDER
Lead Soldering Temperature
& Time
260 /10
°C / sec
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and the functional operation of the device under these or any other conditions above those indicated in the operation of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect reliability.

HY62256A Features

·Fully static operation and Tri-state outputs
·TTL compatible inputs and outputs
·Low power consumption
-2.0V(min.) data retention
·Standard pin configuration
-28 pin 600 mil PDIP
-28 pin 330 mil SOP
-28 pin 8x13.4 mm
TSOP-1 (standard and reversed)

HY62256A Connection Diagram

HY62256A  Connection Diagram

HY62256A datasheet

HY62256A
PDF/DataSheet Download

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