HYB18T256400AF-3S

HYB18T256400AF-3.7

HYB18T256400AF

The 256Mb Double-Data-Rate-2 (DDR2) DRAMs HYB18T256400AFare highspeed CMOS Double Data Rate 2 Synchronous DRAM devices containing 268,435,456 bits and are internally configured as a quad-bank DRAMs. The 256Mb chip is organized as either 16Mbit x 4 I/O x 4 b...

HYB18T256324F22

The Infineon 256-Mbit GDDR3 DRAM HYB18T256324F22 [600MHz]is a high speed memory device, designed for high bandwidth intensive applications like PC graphics systems. The chip's quad bank architecture is optimized for high speed and achieves a peak bandwidth ...

HYB18T256324F20

The Infineon 256-Mbit GDDR3 DRAM HYB18T256324F20 [600MHz]is a high speed memory device, designed for high bandwidth intensive applications like PC graphics systems. The chip's quad bank architecture is optimized for high speed and achieves a peak bandwidth ...

HYB18T256324F16

The Infineon 256-Mbit GDDR3 DRAM HYB18T256324F16 [600MHz]is a high speed memory device, designed for high bandwidth intensive applications like PC graphics systems. The chip's quad bank architecture is optimized for high speed and achieves a peak bandwidth ...

HYB18T256161BF-25