HYS64T32001HU

Features: • 240-Pin PC26400, PC25300, PC24200 and PC23200 DDR2 SDRAM memory modules for use as main memory when installed in systems such as mobile personal computers.• 16M * 64, 32M * 64, 32M * 72, 64M * 64, 64M * 72 module organization and 16M * 16, 32M * 8 chip organization• 1...

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SeekIC No. : 004369446 Detail

HYS64T32001HU: Features: • 240-Pin PC26400, PC25300, PC24200 and PC23200 DDR2 SDRAM memory modules for use as main memory when installed in systems such as mobile personal computers.• 16M * 64, 32M * 6...

floor Price/Ceiling Price

Part Number:
HYS64T32001HU
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/5

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Product Details

Description



Features:

• 240-Pin PC26400, PC25300, PC24200 and PC23200 DDR2 SDRAM memory modules for use as main memory when installed in systems such as mobile personal computers.
• 16M * 64, 32M * 64, 32M * 72, 64M * 64, 64M * 72 module organization and 16M * 16, 32M * 8 chip organization
• 128 MB, 256 MB and 512 MB modules built with 256-Mbit DDR2 SDRAMs in PG-TFBGA-60 and PG-TFBGA-84 chipsize packages
• Standard Double-Data-Rate-Two Synchronous DRAMs (DDR2 SDRAM) with a single + 1.8 V (± 0.1 V) power supply
• All Speed Grades faster than DDR2400 comply with DDR2400 timing specifications
• Programmable CAS Latencies (3, 4, 5 and 6), Burst Length (4 & 8) and Burst Type
• Auto Refresh (CBR) and Self Refresh
• Average Refresh Period 7.8 s at a TCASE lower than 85 °C, 3.9 s between 85 °C and 95 °C
• Programmable self refresh rate via EMRS2 setting
• All inputs and outputs SSTL_18 compatible
• Off-Chip Driver Impedance Adjustment (OCD) and On-Die Termination (ODT)
• Serial Presence Detect with E2PROM
• UDIMM Dimensions (nominal): 30 mm high, 133.35 mm wide
• Based on standard reference layouts Raw Card "A", "C","D", "E", "F" and "G"
• RoHS compliant products1)




Pinout

  Connection Diagram


Specifications

Parameter
Symbol
Rating
Unit
Note
Voltage on VDD pin relative to VSS
VDD
1.0 to +2.3
V
1
Voltage on VDDQ pin relative to VSS
VDDQ
0.5 to +2.3
V
1,2
Voltage on VDDL pin relative to VSS
VDDL
0.5 to +2.3
V
1,2
Voltage on any pin relative to VSS VIN,VOUT
0.5 to +2.3
V
1
Storage Temperature
TSTG
-55 to +100
°C
1,2

1) When VDD and VDDQ and VDDL are less than 500 mV; VREF may be equal to or less than 300 mV.
2) Storage Temperature is the case surface temperature on the center/top side of the DRAM.
 Attention: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.




Description

The HYS64T32001HU module family are unbuffered DIMM modules "UDIMMs" with 30,0 mm height based on DDR2 technology. DIMMs are available as non-ECC modules in 16M * 64 (128MB), 32M * 64 (256MB), 64M * 64 (512MB) and as ECC modules in 32M * 72 (256MB), 64M * 72 (512MB) organization and density, intended for mounting into 240-pin connector sockets.

The memory array of the HYS64T32001HU is designed with 256-Mbit Double-Data-Rate-Two (DDR2) Synchronous DRAMs. Decoupling capacitors are mounted on the PCB board. The DIMMs feature serial presence detect based on a serial E2PROM device using the 2-pin I2C protocol. The first 128 bytes are programmed with configuration data and are write protected; the second 128 bytes are available to the customer.




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