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I1N50A

Features: Avalanche Rugged TechnologyRugged Gate Oxide TechnologyLower Input CapacitanceImproved Gate ChargeExtended Safe Operating AreaLower Leakage Current : 10 A (Max.) @ VDS = 500VLower RDS(ON) : 4.046 (Typ.)Specifications Symbol Characteristic Value Units VDSS Drain...

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SeekIC No. : 004370169 Detail

I1N50A: Features: Avalanche Rugged TechnologyRugged Gate Oxide TechnologyLower Input CapacitanceImproved Gate ChargeExtended Safe Operating AreaLower Leakage Current : 10 A (Max.) @ VDS = 500VLower RDS(ON) ...

I1N50A Data Sheet

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Part Number:
I1N50A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Description



Features:

Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ VDS = 500V
Lower RDS(ON) : 4.046 (Typ.)



Specifications

Symbol

Characteristic

Value

Units

VDSS

Drain-to-Source Voltage

500

V

ID

Continuous Drain Current (TC=25 )

1.5

A

Continuous Drain Current (TC=100OC )

0.97

IDM

Drain Current-Pulsed

5

A

VGS

Gate-to-Source Voltage

+_ 30

V

EAS

Single Pulsed Avalanche Energy

113

mJ

IAR

Avalanche Current

1.5

A

EAR

Repetitive Avalanche Energy

3.6

mJ

dv/dt

Peak Diode Recovery dv/dt

3.5

V/ns

PD

Total Power Dissipation (TA=25OC ) *

3.1

W
W/OC

Total Power Dissipation (TC=25OC )
Linear Derating Factor

36
0.29

TJ , TSTG

Operating Junction and
Storage Temperature Range

- 55 to +150

OC

TL

 Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5-seconds

300




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