Purchase I1N60A, In-stock I1N60A From SeekIC.
- Table of contents:
I1N60A
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Suppliers
DataSheet
General Description
I1N60A Maximum Ratings
| Symbol | Characteristic | Value | Units |
| VDSS | Drain-to-Source Voltage | 600 | V |
| ID | Continuous Drain Current (TC=25 OC) | 1 | A |
| Continuous Drain Current (TC=100 OC) | 0.6 | ||
| IDM | Drain Current-Pulsed | 3 | A |
| VGS | Gate-to-Source Voltage | +30 | V |
| EAS | Single Pulsed Avalanche Energy | 44 | mJ |
| IAR | Avalanche Current | 1 | A |
| EAR | Repetitive Avalanche Energy | 3.4 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 3.0 | V/ns |
| PD | Total Power Dissipation (TA=25 OC) | 3.1 | W |
| Total Power Dissipation (TC=25 OC) Linear Derating Factor |
34 0.27 |
W W/OC | |
| TJ , TSTG | Operating Junction and Storage Temperature Range | - 55 to +150 | OC |
| TL | Maximum Lead Temp. for Soldering Purposes, 1/8 " from case for 5-seconds | 300 |
I1N60A Features
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 mA (Max.) @ VDS = 600V
Low RDS(ON) : 9.390 W (Typ.)
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 mA (Max.) @ VDS = 600V
Low RDS(ON) : 9.390 W (Typ.)
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