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MFG:ISSI D/C:2009+


Part Number: IC42S16400
MFG: ISSI
D/C: 2009+
Description: The IC42S16400 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as ...
MFG:ISSI D/C:2009+


MFG: ISSI
D/C: 2009+
Description: The IC42S16400 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as ...
The IC42S16400 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 1,048,576 x 16 x 4 (word x bit x bank), respectively.
The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture and clock frequency up to 166MHz for -6. All input and outputs are
synchronized with the positive edge of the clock.The synchronous DRAMs are compatible with Low Voltage TTL (LVTTL).These products are packaged in 54-pin
TSOP-2 and 60ball(64M) VF-BGA.
|
Symbol |
Parameters |
Rating |
Unit |
|
VDD |
Supply Voltage (with respect to VSS) |
0.5 to +4.6 |
V |
|
VDDQ |
Supply Voltage for Output (with respect to VSSQ) |
0.5 to +4.6 |
V |
|
VI |
Input Voltage (with respect to VSS) |
0.5 to VDD+0.5 |
V |
|
VO |
Output Voltage (with respect to VSSQ) |
1.0 to VDDQ+0.5 |
V |
|
IO |
Short circuit output current |
50 |
mA |
|
PD |
Power Dissipation (TA = 25 °C) |
1 |
W |
|
TOPT |
Operating Temperature |
0 to +70 |
°C |
|
TSTG |
Storage Temperature |
65 to +150 |
°C |
IC42S16400-6TIG
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