Purchase IC42S16400A, In-stock IC42S16400A From SeekIC.
Part Number: IC42S16400A
Description: The IC42S16400A are high-speed 67,108,864-bit syn-chronous dynamic random-access memories, orga-nized as 1,048,576 x 16...
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IC42S16400A
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DataSheet
General Description
IC42S16400A General Description
The IC42S16400A are high-speed 67,108,864-bit syn-chronous dynamic random-access memories, orga-nized as 1,048,576 x 16 x 4 (word x bit x bank), respectively.
The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture and clock frequency up to 166MHz for -6. All input and outputs are synchronized with the positive edge of the clock.The synchronous DRAMs are compatible with Low Voltage TTL (LVTTL).These products are packaged in 54-pin TSOP-2 and 60ball(64M) VF-BGA.
IC42S16400A Features
• Single 3.3V (± 0.3V) power supply
• High speed clock cycle time -6: 166MHz, -7: 133MHz<3-3-3>
• Fully synchronous operation referenced to clock rising edge
• Possible to assert random column access in every cycle
• Quad internal banks contorlled by A12 & A13 (Bank Select)
• Byte control by LDQM and UDQM for IC42S16400A
• Programmable Wrap sequence (Sequential / Interleave)
• Programmable burst length (1, 2, 4, 8 and full page)
• Programmable CAS latency (2 and 3)
• Automatic precharge and controlled precharge
• CBR (Auto) refresh and self refresh
• LVTTL compatible inputs and outputs
• 4,096 refresh cycles / 64ms
• Burst termination by Burst stop and Precharge command
• Package 400mil 54-pin TSOP-2 and 60ball(64M) VF-BGA
• Pb(lead)-free package is available
• High speed clock cycle time -6: 166MHz, -7: 133MHz<3-3-3>
• Fully synchronous operation referenced to clock rising edge
• Possible to assert random column access in every cycle
• Quad internal banks contorlled by A12 & A13 (Bank Select)
• Byte control by LDQM and UDQM for IC42S16400A
• Programmable Wrap sequence (Sequential / Interleave)
• Programmable burst length (1, 2, 4, 8 and full page)
• Programmable CAS latency (2 and 3)
• Automatic precharge and controlled precharge
• CBR (Auto) refresh and self refresh
• LVTTL compatible inputs and outputs
• 4,096 refresh cycles / 64ms
• Burst termination by Burst stop and Precharge command
• Package 400mil 54-pin TSOP-2 and 60ball(64M) VF-BGA
• Pb(lead)-free package is available
IC42S16400A Connection Diagram
IC42S16400A-6BG
PDF/DataSheet Download
- Datasheet: IC42S16400A-6BG
- File Size: 1098260 KB
- Manufacturer: ICSI [Integrated Circuit Solution Inc]
- Click here to Download
- ·IC41C16100A
- ICSI [Integrated Circuit Solution Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 237271 KB
- ·IC41C16100A-50K
- ICSI [Integrated Circuit Solution Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 237271 KB
- ·IC41C16100A-50T
- ICSI [Integrated Circuit Solution Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 237271 KB
- ·IC41C16100A-60K
- ICSI [Integrated Circuit Solution Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 237271 KB
- ·IC41C16100A-60T
- ICSI [Integrated Circuit Solution Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 237271 KB
- ·IC41C16100AS
- ICSI [Integrated Circuit Solution Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 237271 KB
- ·IC41C16100AS-50K
- ICSI [Integrated Circuit Solution Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 237271 KB
- ·IC41C16100AS-50T
- ICSI [Integrated Circuit Solution Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 237271 KB
IC42S16400A Relative Products
IC42S16400
The IC42S16400 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 1,048,576 x 16 x 4 (word x bit x bank), respectively.The synchronous DRAMs of the IC42S16400 achieved high-speed data transfer using the pipeline architectu...
IC42S16160C-7TL
The IC42S16160C-7TL is designed as one kind of 4M x 16 bits x 4 banks (256-Mbit) synchronous dynamic RAM device that is compatible with Low Voltage TTL (LVTTL) and is available in 54-pin TSOP-2 package. Features of the IC42S16160C-7TL are:(1)Single 3.3V (?0...
IC42S16160C-6TL
The IC42S16160C-6TL is designed as one kind of 4M x 16 bits x 4 banks (256-Mbit) synchronous dynamic RAM device that is compatible with Low Voltage TTL (LVTTL) and is available in 54-pin TSOP-2 package. Features of the IC42S16160C-6TL are:(1)Single 3.3V (?0...
IC42S16102
ICSI's 16Mb Synchronous DRAM IC42S16102 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of ...
IC42S16101
ICSI's 16Mb Synchronous DRAM IC42S16101 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of ...
IC42S16100
ICSI's 16Mb Synchronous DRAM IC42S16100 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of ...
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