Features: • High-speed access times:- 8, 10, 12 and 15 ns• High-preformance, lower-power CMOS process• Multiple center power and ground pins for greater noise immunity• Easy memory expansion withCE and OE options•CE power-down• CMOS power: 540 mW @ 10 ns 36 mW s...
IC61LV2568: Features: • High-speed access times:- 8, 10, 12 and 15 ns• High-preformance, lower-power CMOS process• Multiple center power and ground pins for greater noise immunity• Easy ...
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ApplicationUsing this IC socket, developers can connect a 64-pin 0.8 mm-pitch LCC (64D0) package M...
Features: • High-speed access time: 12, 15, 20, 25 ns• Low active power: 600 mW (typic...

|
Symbol |
Parameter |
Value |
Unit | |
| VCC | Power Supply Voltage Relative to GND |
0.5 to +4.6 |
V | |
| VTERM | Terminal Voltage with Respect to GND |
0.5 to Vcc + 0.5 |
V | |
| TBIAS | Temperature Under Bias |
Com. Ind. |
10 to +85 45 to +90 |
|
| TSTG | Storage Temperature |
65 to +150 |
||
| PD | Power Dissipation |
1 |
W | |
| IOUT | DC Output Current |
±20 |
mA |
The ICSI IC61LV2568 is a very high-speed, low power,262,144-word by 8-bit COMS static RAM. The IC61LV2568 is fabricated using ICSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher preformance and low power consumotion devices.
When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 36 mW (max.) with CMOS input levels.
The IC61LV2568 operates from a single 3.3V power supply and all inputs are TTL-compatible.
The IC61LV2568 is available in 36-pin, 400mil SOJ and 44-pin TSOP-2 package