Features: • High-speed access times:- 8, 10, 12 and 15 ns• High-preformance, lower-power CMOS process• Multiple center power and ground pins for greater noise immunity• Easy memory expansion with CE andOE options• CE power-down• Fully static operation: no clock ...
IC61LV5128: Features: • High-speed access times:- 8, 10, 12 and 15 ns• High-preformance, lower-power CMOS process• Multiple center power and ground pins for greater noise immunity• Easy ...
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ApplicationUsing this IC socket, developers can connect a 64-pin 0.8 mm-pitch LCC (64D0) package M...
Features: • High-speed access time: 12, 15, 20, 25 ns• Low active power: 600 mW (typic...

|
Symbol |
Parameter |
Value |
Unit |
|
VTERM |
Terminal Voltage with Respect to GND |
0.5 to Vcc + 0.5 |
V |
|
TBIAS |
Temperature Under Bias |
55 to +125 |
|
|
TSTG |
Storage Temperature |
65 to +150 |
|
|
PD |
Power Dissipation |
1.0 |
W |
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
The ICSI IC61LV5128 is a very high-speed, low power, 524,288-word by 8-bit COMS static RAM. The IC61LV5128 is fabricated using ICSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher preformance and low power consumotion devices.
When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 W (typical) with CMOS input levels.
The IC61LV5128 operates from a single 3.3V power supply and all inputs are TTL-compatible.
The IC61LV5128 is available in 36-pin, 400mil SOJ and 44-pin TSOP-2 package.