
Price: 1-1 USD
low loss IGBT module, 1200V, 600A, N channel, MOS input, fast and soft inverse CAL diodes

Price: 2-2.5 USD
Boot Sector Flash Memory, SOP-44PIN, 0.32 μm, –0.5 V to +7.0 V, 200 mA

Price: 75-85 USD
TOSHIBA GTR module, Silicon N Channel IGBT, Motor Control, 400 KHz, 0.12 mA

Price: 0.68-0.75 USD
K4E641613C-GN60, BGA, Samsung semiconductor, Integrated Circuits (ICs)

Price: 3-6 USD
CMOS SRAM, DIP32, 1.0W

Price: 1-50 USD
high performance, 1,048,576-bit, Electrically Programmable, UV Erasable Read Only Memory, PLCC32

Price: 110-115 USD
high arm short circuit capability, high DC current gain, GTR module, 6MBP80RTA060-01

Price: 1-1 USD
GTR Module, 600 V, N Channel IGBT

Price: 1-4 USD
Field Effect Transistor Silicon, TO-3P, P Channel MOS Type, 250V, 20A, 30W, Low leakage current

Price: 1-2 USD
Quad Low Power, Precision Comparator, 14-SOIC, Low Power Consumption, Low Input Bias Current, 250mV

Price: 1.6-2 USD
synchronous, high data rate, Dynamic RAM, 268,435,456 bits, FBGA, -1.0 to 4.6 V, 50 mA, 1.0 W

Price: 0.5-0.8 USD
Quadruple 2-input AND gate