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IDC05S60C

Features: · Revolutionary semiconductor material - Silicon Carbide· Switching behavior benchmark· No reverse recovery· No temperature influence on the switching behavior· No forward recovery· High surge current capabiliApplication· SMPS, PFC, snubberSpecifications Parameter Symbol Condition...

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SeekIC No. : 004371590 Detail

IDC05S60C: Features: · Revolutionary semiconductor material - Silicon Carbide· Switching behavior benchmark· No reverse recovery· No temperature influence on the switching behavior· No forward recovery· High s...

IDC05S60C Data Sheet

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Part Number:
IDC05S60C
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Revolutionary semiconductor material -  Silicon Carbide
· Switching behavior benchmark
· No reverse recovery
· No temperature influence on the switching behavior
· No forward recovery
· High surge current capabili


Application

· SMPS, PFC, snubber


Specifications

Parameter Symbol Condition Value Unit
Repetitive peak reverse voltage VRRM   600 V
  VDC   600 V
forward current IF   5 A
Non-Repetitive peak forward surge current sine halfwave IFSM TC =25, tP =10 ms 42 A
Repetitive peak forward current
limited by Tjmax		 IFRM TC = 100, Tj=150,
D=0.1		 21 A
Non-repetitive peak forward current IFMAX TC =25, tp=10s 180 A
Junction temperature TJ   -55...+175
Storage temperature range TSTG   -55...+175



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