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IDC08S60C

Features: · Revolutionary semiconductor material - Silicon Carbide· Switching behavior benchmark· No reverse recovery· No temperature influence on the switching behavior· No forward recovery· High surge current capabilityApplication· SMPS, PFC, snubberSpecifications Parameter SYMBOL conditi...

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SeekIC No. : 004371592 Detail

IDC08S60C: Features: · Revolutionary semiconductor material - Silicon Carbide· Switching behavior benchmark· No reverse recovery· No temperature influence on the switching behavior· No forward recovery· High s...

IDC08S60C Data Sheet

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Part Number:
IDC08S60C
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Revolutionary semiconductor material -
    Silicon Carbide
· Switching behavior benchmark
· No reverse recovery
· No temperature influence on the switching behavior
· No forward recovery
· High surge current capability


Application

· SMPS, PFC, snubber


Specifications

Parameter SYMBOL conditious Rating UNIT
Repetitive peak reverse voltage VRRM   600 V
Continuous reverse voltage VDC   600 V
repetitive peak forward currentTjmax IF   8 A
non-repetitive peak forward current sine halfwave
 IF.SM TC =25° C, tP =10 ms 59 A
Repetitive peak forward current limited by Tjmax IF,RM TC = 100°C, Tj=150°C,
D=0.1		 35 A
Non-repetitive peak forward current IFMAX TC =25°C, tp=10s 264 A
junction temperature TJ   -55...+175
storage temperature TSTG   -55...+175



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