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Part Number: IDT6168LA
Description: The IDT6168 is a 16,384-bit high-speed static RAM organized as 4K x 4. It is fabricated using lDT's hi...


Description: The IDT6168 is a 16,384-bit high-speed static RAM organized as 4K x 4. It is fabricated using lDT's hi...
The IDT6168 is a 16,384-bit high-speed static RAM organized as 4K x 4. It is fabricated using lDT's high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective approach for high-speed memory applications.
Access times as fast 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circuit will automatically go to, and remain in, a standby mode as long as CS remains HIGH. This capability provides significant system-level power and cooling savings. The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1µW operating off a 2V battery. All inputs and outputs of the IDT6168 are TTL-compatible and operate from a single 5V supply.
The IDT6168 is packaged in either a space saving 20-pin, 300-mil ceramic or plastic DIP or a 20-pin LCC providing high board-level packing densities.
Military grade product is manufactured in compliance with the latest revision of MIL-STD-883, Class B, making it ideally suited to military temperature applications demanding the highest level of performance and reliability.
| Symbol | Rating | Commercial | Military | Unit |
| VTERM | Terminal Voltage with Respect to GND |
-0.5 to +7.0 | -0.5 to +7.0 | V |
| TA | Operating Temperature |
0 to +70 | -55 to +125 | |
| TBIAS | Temperature Under Bias |
-55 to +125 | -65 to +135 | |
| TSTG | Storage Temperature |
-55 to +125 | -65 to +150 | |
|
PT |
Power Dissipation |
1.0 |
1.0 |
W |
| IOUT | DC Output Current |
50 | 50 | mA |
IDT6168LA
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