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Part Number: IDT70824S

 

 

 

 

Description: The IDT70824 is a high-speed 4K x 16-Bit Sequential Access Random Access Memory (SARAM). The SARAM off...


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IDT70824S General Description


The IDT70824 is a high-speed 4K x 16-Bit Sequential Access Random Access Memory (SARAM). The SARAM offers a single-chip solution to buffer data sequentially on one port, and be accessed randomly (asynchronously) through the other port. The device has a Dual-Port RAM based architecture with a standard SRAM interface for the random (asynchronous) access port, and a clocked interface with counter sequencing for the sequential (synchronous) access port.

Fabricated using CMOS high-performance technology, this memory device typically operates on less than 775mW of power at maximum high-speed clock-to-data and Random Access. An automatic power down feature, controlled by CE, permits the on-chip circuitry of each port to enter a very low standby power mode.

The IDT70824 is packaged in a 80-pin Thin Quad Flatpack (TQFP) or 84-pin Pin Grid Array (PGA). Military grade product is manufactured in compliance with the latest revision of MIL-PRF-38535 QML, making it ideally suited to military temperature applications demanding the highest level of performance and reliability.

IDT70824S Maximum Ratings

Symbol
Rating
Commercial
& Industrial
Military
Unit
VTERM(2 )

Terminal Voltage
with Respect
to GND
-0.5 to +7.0
-0.5 to +7.0
V
TBIAS
Temperature
Under Bias
-55 to +125
-65 to +135
oC
TSTG
Storage
Temperature
-55 to +125
-65 to +150
o
C
IOUT
DC Output
Current
50
50
mA

 

NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. VTERM must not  exceed Vcc + 10% for more than 25% of the cycle time or 10ns maximum, and is limited to < 20mA for the period of VTERM  > Vcc + 10%.

IDT70824S Features

High-speed access
    Military: 35/45ns (max.)
    Commercial: 20/25/35/45ns (max.)
 Low-power operation
   IDT70824S
       Active: 775mW (typ.)
       Standby: 5mW (typ.)
   IDT70824L
       Active: 775mW (typ.)
       Standby: 1mW (typ.)
4K x 16 Sequential Access Random Access Memory  (SARAM™)
    Sequential Access from one port and standard Random
       Access from the other port
    Separate upper-byte and lower-byte control of the
       Random Access Port
 High speed operation
   20ns tAA for random access port
   20ns tCD for sequential port
   25ns clock cycle time
 Architecture based on Dual-Port RAM cells
 
Compatible with Intel BMIC and 82430 PCI Set
 Width and Depth Expandable
 Sequential side
    Address based flags for buffer control
    Pointer logic supports up to two internal buffers
 Battery backup operation - 2V data retention
 TTL-compatible, single 5V (+10%) power supply
 Available in 80-pin TQFP and 84-pin PGA
 Military product compliant to MIL-PRF-38535 QML
 Industrial temperature range (40°C to +85°C) is available
    for selected speeds

IDT70824S Connection Diagram

IDT70824S  Connection Diagram

IDT70824S datasheet

IDT70824S
PDF/DataSheet Download

  • Datasheet: IDT70824S
  • File Size: 210011 KB
  • Manufacturer: IDT [Integrated Device Technology]
  • Click here to Download

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